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June 2003
NDS351AN
N-Channel, Logic Level, PowerTrench ? MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
? 1.4 A, 30 V.
R DS(ON) = 160 m ? @ V GS = 10 V
R DS(ON) = 250 m ? @ V GS = 4.5 V
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
D
S
? Ultra-Low gate charge
? Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT TM -3 design for
superior thermal and electrical capabilities
? High performance trench technology for extremely
low R DS(ON)
D
G
S
SuperSOT -3
TM
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
1.4
A
– Pulsed
10
P D
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
Package Marking and Ordering Information
Device Marking
351A
Device
NDS351AN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2003 Fairchild Semiconductor Corporation
NDS351AN Rev E(W)
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相关代理商/技术参数
NDS351AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS351AN_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS351AN-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series N-Channel 30 V 160 mO Logic Level PowerTrench Mosfet SSOT-3
NDS351ANX 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 30V 1.2A SuperSOT3
NDS351N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS351N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS352AP 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23